CS64N90 , 64N90 , 85V,92A N-Channel Trench Process Power MOSFET
CS64N90
Pb
Pb Free Plating Product
85V,92A N-Channel Trench Process Power MOSFET
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General Description CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=85V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance Application
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D G RDS(ON) = 6.2 mΩ CS64N90 (TO-220 HeatSink) S G CS64N90F (TO-220F FullPak) D DS G CS64N90B (TO-263/D2PAK) Schematic Diagram VDS = 85 V ID = 92A |
Table 1. Absolute Maximum Ratings (TA=25°C)
Symbol
VDS
VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD
EAS TJ,TSTG
Parameter
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25°C
Drain Current (DC) at Tc=100°C
Drain Current-Continuous@ Current-Pulsed (Note 1) Peak Diode Recovery Voltage
Maximum Power Dissipation(Tc=25°C) Derating Factor
Single Pulse Avalanche Energy (Note 2) Operating Junction and Storage Temperature Range
Value Unit
85 V ±25 V 92 A 64.4 A 368 A
30 V/ns 139 W
0.93 W/°C 625 mJ
-55 To 175 °C
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Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25°C,VDD=40V,VBGB=10V,RG=25Ω