IRF7422 , F7422 , IRF7422D2 , IRF7422TR , MOSFET P-Channel, 4.3A, 20V, 8-Pin SOIC

Parameter

Maximum

Units

ID @TA =25°C

Continuous Drain Current, VGS @ -4.5V

-4.3

A

ID @TA =70°C

-3.4

IDM

Pulsed Drain Current À

-33

PD @TA = 25°C

Power Dissipation

2.0

W

PD @TA = 70°C

1.3

Linear Derating Factor

16

mW/°C

VGS

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt Á

-5.0

V/ns

TJ, TSTG

Junction and Storage Temperature Range

-55 to +150

°C

Parameter

Maximum

Units

RθJA

Junction-to-Ambient Ã

62.5

°C/W