IRFB3607 , B3607 , IRF3607PBF ,85V,92A N-Channel Trench Process Power MOSFETs

G

D

S

Gate

Drain

Source

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

80c

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

56c

IDM

Pulsed Drain Current d

310

PD @TC = 25°C

Maximum Power Dissipation

140

W

Linear Derating Factor

0.96

W/°C

VGS

Gate-to-Source Voltage

± 20

V °C

TJ TSTG

Operating Junction and Storage Temperature Range

-55 to+175

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting torque, 6-32 or M3 screw

10lbx in (1.1Nx m)

EAS (Thermally limited)

Single Pulse Avalanche Energy e

120

mJ

IAR

Avalanche Currentc

46

A

EAR

Repetitive Avalanche Energy g

14

mJ

Symbol

Parameter

Typ.

Max.

Units

RJC

Junction-to-Case k

–––

1.045

°C/W

RCS

Case-to-Sink, Flat Greased Surface, TO-220

0.50

–––

RJA

Junction-to-Ambient, TO-220 j

–––

62

RJA

Junction-to-Ambient (PCB Mount) , D2Pak jk

–––

40