HY1707 , HY1707B , 80A 75V TO-220 mosfet transistor

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 178 W

Maximum Drain-Source Voltage |Vds|: 70 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 88 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm