IRF7422 , F7422 , IRF7422D2 , IRF7422TR , MOSFET P-Channel, 4.3A, 20V, 8-Pin SOIC
IRF7422 , F7422 , IRF7422D2 , IRF7422TR
FETKYTM MOSFET & Schottky Diode
SO-8
Parameter |
Maximum |
Units |
|
ID @TA =25°C |
Continuous Drain Current, VGS @ -4.5V |
-4.3 |
A |
ID @TA =70°C |
-3.4 |
||
IDM |
Pulsed Drain Current À |
-33 |
|
PD @TA = 25°C |
Power Dissipation |
2.0 |
W |
PD @TA = 70°C |
1.3 |
||
Linear Derating Factor |
16 |
mW/°C |
|
VGS |
Gate-to-Source Voltage |
± 12 |
V |
dv/dt |
Peak Diode Recovery dv/dt Á |
-5.0 |
V/ns |
TJ, TSTG |
Junction and Storage Temperature Range |
-55 to +150 |
°C |
Thermal Resistance Ratings
Notes:
Parameter |
Maximum |
Units |
|
RθJA |
Junction-to-Ambient à |
62.5 |
°C/W |
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11) ISD ≤ -2.2A, di/dt ≤ -50A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300μs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.