Yorum Yap
0
40T65QES - MBQ40T65QES - MBQ40T65QESTH - 40T65 - TO-247 80A 650V 375W IGBT TRANSISTOR
Stok Kodu
11-3545
2,20 USD + KDV
100,12 TL
Kalan Stok : 104
MBQ40T65QES - MBQ40T65QESTH - 40T65 - TO-247 80A 650V 375W IGBT TRANSISTOR
Type Designator: MBQ40T65QES
Type: IGBT + Anti-Parallel Diode
Marking Code: 40T65QES
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 230
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 36
Collector Capacity (Cc), typ, pF: 120
Total Gate Charge (Qg), typ, nC: 60
Type Designator: MBQ40T65QES
Type: IGBT + Anti-Parallel Diode
Marking Code: 40T65QES
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 230
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 36
Collector Capacity (Cc), typ, pF: 120
Total Gate Charge (Qg), typ, nC: 60
Bu ürüne ilk yorumu siz yapın!